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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/61822
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dc.contributor.authorAbramov, I.-
dc.contributor.authorLabunov, V.-
dc.contributor.authorKalameitsava, N.-
dc.date.accessioned2025-10-15T09:03:30Z-
dc.date.available2025-10-15T09:03:30Z-
dc.date.issued2025-
dc.identifier.citationAbramov, I. Simulation of field-effect transistors based on bilayer graphene and resonant-tunneling heterostructures based on 2D-materials with vertical transport = Моделирование полевых транзисторов на основе двухслойного графена и резонансно-туннельных гетероструктур на основе 2D-материалов с вертикальным транспортом / I. Abramov, V. Labunov, N. Kalameitsava // Micro- and nanoelectronics – 2025 (ICMNE – 2025) : Proccedings of the 16th Valiev International Conference, 6–10 October 2025, Yaroslavl, Russia / National Research Center “Kurchatov Institute”. – Moscow : МАКС Пресс, 2025. – P. 60–61.en_US
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/61822-
dc.description.abstractТhe article is dedicated to simulation of field-effect transistors based on bilayer graphene and resonant-tunneling heterostructures based on 2D-materials with vertical transporten_US
dc.language.isoenen_US
dc.subjectпубликации ученыхen_US
dc.subjectfield effect transistorsen_US
dc.subjectbilayer graphenesen_US
dc.subjectresonant tunneling heterostructuresen_US
dc.titleSimulation of field-effect transistors based on bilayer graphene and resonant-tunneling heterostructures based on 2D-materials with vertical transporten_US
dc.title.alternativeМоделирование полевых транзисторов на основе двухслойного графена и резонансно-туннельных гетероструктур на основе 2D-материалов с вертикальным транспортомen_US
dc.typeArticleen_US
local.description.annotationСтатья посвящена моделированию полевых транзисторов на основе двухслойного графена и резонансно-туннельных гетероструктур на основе 2D-материалов с вертикальным транспортомen_US
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