https://libeldoc.bsuir.by/handle/123456789/61822| Title: | Simulation of field-effect transistors based on bilayer graphene and resonant-tunneling heterostructures based on 2D-materials with vertical transport |
| Other Titles: | Моделирование полевых транзисторов на основе двухслойного графена и резонансно-туннельных гетероструктур на основе 2D-материалов с вертикальным транспортом |
| Authors: | Abramov, I. Labunov, V. Kalameitsava, N. |
| Keywords: | публикации ученых;field effect transistors;bilayer graphenes;resonant tunneling heterostructures |
| Issue Date: | 2025 |
| Citation: | Abramov, I. Simulation of field-effect transistors based on bilayer graphene and resonant-tunneling heterostructures based on 2D-materials with vertical transport = Моделирование полевых транзисторов на основе двухслойного графена и резонансно-туннельных гетероструктур на основе 2D-материалов с вертикальным транспортом / I. Abramov, V. Labunov, N. Kalameitsava // Micro- and nanoelectronics – 2025 (ICMNE – 2025) : Proccedings of the 16th Valiev International Conference, 6–10 October 2025, Yaroslavl, Russia / National Research Center “Kurchatov Institute”. – Moscow : МАКС Пресс, 2025. – P. 60–61. |
| Abstract: | Тhe article is dedicated to simulation of field-effect transistors based on bilayer graphene and resonant-tunneling heterostructures based on 2D-materials with vertical transport |
| Alternative abstract: | Статья посвящена моделированию полевых транзисторов на основе двухслойного графена и резонансно-туннельных гетероструктур на основе 2D-материалов с вертикальным транспортом |
| URI: | https://libeldoc.bsuir.by/handle/123456789/61822 |
| Appears in Collections: | Публикации в зарубежных изданиях |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Abramov_Simulation.pdf | 345.48 kB | Adobe PDF | View/Open |
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