Temperature-dependent parameters of spatially inhomogeneous heterojunctions single-walled carbon nanotubes/Si

Abstract

The influence of the inhomogeneities of single-walled carbon nanotube (SWCNT) film/Si Schottky barriers (SB) on their parameters was studied by measuring the current–voltage characteristics over a wide temperature range, from 20 K to 315 K. Data were analyzed both within the thermionic emission theory and its modification employing the Gaussian distribution of the SB height. The entire temperature range was divided into three sub-ranges for an adequate description of the experimental data. It was also necessary to consider the decrease in the effective area of the heterojunction, caused by the morphology features of the SWCNT film, and the increasing role of additional factors of current transport through the barrier, in addition to thermionic emission, with decreasing temperature.