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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/62921
Title: In situ growth of Te-doped Cs2SnCl6 scintillator composite films for X-ray imaging
Authors: Junnan Wang
Zeyu Wang
Gaponenko, N. V.
Jindou Shi
Zheyuan Da
Chen Zhang
Yongqiang Ji
Qing Yao
Youlong Xu
Minqiang Wang
Keywords: публикации ученых;X-ray imaging technology;scintillation behaviour;advancement highlights
Issue Date: 2025
Publisher: Royal Society of Chemistry
Citation: In situ growth of Te-doped Cs2SnCl6 scintillator composite films for X-ray imaging / Junnan Wang, Zeyu Wang, N. V. Gaponenko [et al.] // Journal of Materials Chemistry C. – 2025. – Vol. 13, Issue 6. – P. 3047–3053.
Abstract: X-ray imaging technology has been integral to numerous aspects of people's lives since its inception. With the growing demand for advanced imaging technologies, lead-free metal halide perovskites have received significant attention due to their non-toxicity, stability, and excellent optical properties. This paper investigates the scintillation behaviour of a Te doped Cs2SnCl6 scintillator composite film (CF) prepared through an innovative in situ growth strategy. This approach achieves the direct growth of Cs2SnCl6:Te micro-crystals within polymethyl methacrylate (PMMA), mitigating the issues of optical property degradation and inhomogeneous distribution that are inevitable in a conventional two-step mixing method. By controllable optimization of the doping ratio of Te, the Cs2SnCl6:Te/PMMA CFs exhibited exceptional scintillation properties under X-ray irradiation, with the detection limit reaching up to 112 nGyairs−1. In X-ray imaging applications, the Cs2SnCl6:Te 15%/PMMA CF demonstrated advanced sensitivity, producing high-resolution structural images of the target object. This advancement highlights the promising potential of lead-free metal halide perovskites in the development and application of X-ray imaging technology
URI: https://libeldoc.bsuir.by/handle/123456789/62921
DOI: DOI https://doi.org/10.1039/D4TC03906H
Appears in Collections:Публикации в зарубежных изданиях

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