А Comparative Study of Error-Correcting Codes for Multi-Cell Upsets in Memories: CLC and OPCoSA

Abstract

With semiconductor scaling, memories are more vulnerable to radiation-induced Multiple Cell Upsets (MCU). This paper compares two 2D error-correcting codes: CLC and OPCoSA. It analyzes their coding structures and evaluates error correction ability, hardware overhead, and reliability via synthesis and fault injection. Experiments show CLC has moderate cost and decent performance. OPCoSA optimizes redundancy to cut hardware overhead while keeping strong correction. This study helps choose suitable ECCs for space memories under resource and reliability constraints.