Skip navigation
Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/6873
Title: Thin-Film Capacitor Based on the Strontium Titanate Formed by the Sol Gel Technique
Authors: Anaraki, H.
Gaponenko, N. V.
Rudenko, M. V.
Kolos, V. V.
Petlitskii, A. N.
Turtsevich, A.S.
Keywords: публикации ученых;Capacitors;Dielectric losses;Film preparation;Sol – gel process;Sol – gels;Statistics;Strontium;Strontium titanates;Thin film circuits;Titanium compounds
Issue Date: 2015
Citation: Thin-Film Capacitor Based on the Strontium Titanate Formed by the Sol Gel Technique / H. Аnaraki [and others] // Russian Microelectronics . – 2015. – Vol. 44, No. 6. – P. 425 – 429.
Abstract: A thin-film ferroelectric capacitor was produced on a silicon substrate. A multilayer strontium titanate film of 280 nm thickness is the base of the capacitor. This film was made by the sol gel technique at the annealing temperature of 750C. The bottom electrode was produced from platinum and the upper one was produced from nickel. The mean value of the dielectric constant is 153 and the standard deviation is 12. The mean value of the dielectric loss tangent is 0.06 and the standard deviation is 0.01.
URI: https://libeldoc.bsuir.by/handle/123456789/6873
Appears in Collections:Публикации в зарубежных изданиях

Files in This Item:
File Description SizeFormat 
Thin.pdf314.8 kBAdobe PDFView/Open
Show full item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.