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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/6873
Title: Thin-Film Capacitor Based on the Strontium Titanate Formed by the Sol Gel Technique
Authors: Anaraki, H.
Gaponenko, N. V.
Rudenko, M. V.
Kolos, V. V.
Petlitskii, A. N.
Turtsevich, A. S.
Гапоненко, Н. В.
Руденко, М. В.
Колос, В. В.
Петлицкий, А. Н.
Турцевич, А. С.
Keywords: публикации ученых
Capacitors
Dielectric losses
Film preparation
Sol – gel process
Sol – gels
Statistics
Strontium
Strontium titanates
Thin film circuits
Titanium compounds
Issue Date: 2015
Citation: Thin-Film Capacitor Based on the Strontium Titanate Formed by the Sol Gel Technique / H. Аnaraki [and others] // Russian Microelectronics . – 2015. – Vol. 44, No. 6. – P. 425 – 429.
Abstract: A thin-film ferroelectric capacitor was produced on a silicon substrate. A multilayer strontium titanate film of 280 nm thickness is the base of the capacitor. This film was made by the sol gel technique at the annealing temperature of 750C. The bottom electrode was produced from platinum and the upper one was produced from nickel. The mean value of the dielectric constant is 153 and the standard deviation is 12. The mean value of the dielectric loss tangent is 0.06 and the standard deviation is 0.01.
URI: https://libeldoc.bsuir.by/handle/123456789/6873
Appears in Collections:Публикации в зарубежных изданиях

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