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Showing results 1073 to 1092 of 41261
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Issue Date
Title
Author(s)
2012
Electromagnetic shielding materials
Boiprav, O. V.
2015
Electromagnetic shields based on paints, filed wiled with nanostructured components
Chinonso, Chinonso
2020
Electromagnetic shields based on powdered coal-containing materials
Ayad, H. A. E.
;
Boiprav, O. V.
;
Lynkou, L. M.
2019
Electron beam nitriding of titanium in medium vacuum
Burdovitsin, V. A.
;
Golosov, D. A.
;
Oks, E. M.
;
Tyunkov, A. V.
;
Yushkov, Yu. G.
;
Zolotukhin, D. B.
;
Zavadski, S
2019
Electron tunneling to the surface states at photocatalysis
Sidorova, T. N.
;
Danilyuk, A. L.
2017
Electron tunneling to the surface states at photocatalysis
Sidorova, T.
;
Danilyuk, A. L.
2014
Electronic and dynamical properties of bulk and layered MoS2
Krivosheeva, A. V.
;
Shaposhnikov, V. L.
;
Borisenko, V. E.
;
Lazzari, J. L.
2023
Electronic and magnetic properties of doped 2D MoS2 /Ph systems
Krivosheeva, A. V.
;
Shaposhnikov, V. L.
2018
Electronic and optic properties of transition metal dichalcogenides (MoS2, WSe2) and graphene heterostructures
Baranava, M. S.
;
Hvazdouski, D. C.
;
Stempitsky, V. R.
;
Volchek, S. A.
;
Najbuk, M.
2022
Electronic finance in China: infrastructure development
Fei Yan
2020
Electronic methodological complex on the Discipline «Applied Mathematics» in English for international students
Malysheva, O. N.
2017
Electronic Properties of Bulk and Monolayer TMDs: Theoretical Study Within DFT Framework (GVJ-2e Method)
Gusakova, J.
;
Wang, X.
;
Shiau, L. L.
;
Krivosheeva, A. V.
;
Shaposhnikov, V. L.
;
Borisenko, V. E.
;
Gusakov, V. E.
;
Tay, B. K.
2017
Electronic properties of bulk and monolayer TMDs: theoretical study within DFT framework GVJ-2e method
Gusakova, J.
;
Wang, X.
;
Shiau, L. L.
;
Krivosheeva, A. V.
;
Shaposhnikov, V. L.
;
Borisenko, V. E.
;
Gusakov, V. E.
;
Tay, B. K.
2017
Electronic properties of graphene-based heterostructures
Skachkova, V. A.
;
Baranava, M. S.
;
Hvazdouski, D. C.
;
Stempitsky, V. R.
2017
Electronic properties of graphene-based heterostructures
Skachkova, V. A.
;
Baranava, M. S.
;
Hvazdouski, D. C.
;
Stempitsky, V. R.
2017
Electronic properties of phosphorene with vacancies: ab initio study
Skachkova, V.
2017
Electronic properties of phosphorene with vacancies: ab initio study
Skachkova, V.
2013
Electronic properties of quasi-two-dimensional molybdenum disulfide with cobalt impurities
Kozlova, O.
;
Nelayev, V.
2015
Electronic properties of semiconducting Ca2Si silicide: From bulk to nanostructures by means of first principles calculations
Borisenko, V. E.
;
Migas, D. B.
;
Bogorodz, V. O.
;
Filonov, A. B.
;
Shaposhnikov, V. L.
;
Galkin, N. G.
2017
Electronic properties of thin BaSi2 films with different orientations
Migas, D. B.
;
Bogorodz, V. O.
;
Krivosheeva, A. V.
;
Shaposhnikov, V. L.
;
Filonov, A. B.
;
Borisenko, V. E.