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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/1420
Title: Electronic and dynamical properties of bulk and layered MoS2
Authors: Krivosheeva, A. V.
Shaposhnikov, V. L.
Borisenko, V. E.
Lazzari, J. L.
Кривошеева, А. В.
Шапошников, В. Л.
Борисенко, В. Е.
Keywords: доклады БГУИР
molybdenum disulfide
nanostructure
electronic properties
phonons
Issue Date: 2014
Publisher: БГУИР
Citation: Electronic and dynamical properties of bulk and layered MoS2 / A. V. Krivosheeva [ and others] // Доклады БГУИР. - 2014. - № 5 (83). - С. 34 - 37.
Abstract: Electronic and dynamical properties of MoS2 are determined by means of theoretical calculations. Various numbers of layers with different thickness of the vacuum layer were considered. We have found that the band gap of bulk MoS2 is increasing upon decreasing of the number of layers from 0.76 eV up to 1.85 eV, and transforms from indirect to direct one in one-monolayer structure. The influence of vacancies on the electronic properties of MoS2 is analyzed and its dynamical properties are presented.
URI: https://libeldoc.bsuir.by/handle/123456789/1420
Appears in Collections:№5 (83)

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