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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/34035
Title: Electronic properties of graphene-based heterostructures
Authors: Skachkova, V. A.
Baranava, M. S.
Hvazdouski, D. C.
Stempitsky, V. R.
Скачкова, В. А.
Баранова, М. С.
Гвоздовский, Д. Ч.
Стемпицкий, В. Р.
Keywords: публикации ученых
ab initio simulation
DFT
dichalcogenide
graphene
heterostructure
ZnS
ZnO
Issue Date: 2017
Publisher: IOPscience, United Kingdom
Citation: Electronic properties of graphene-based heterostructures / V. A. Skachkova and other // Journal of Physics: Conference Series. – 2017. – 917. – P. 092012. – doi :10.1088/1742-6596/917/9/092012.
Abstract: Heterostructures based on graphene were investigated by using density function theory (DFT). It is found that energy gap appear in ZnS-graphene heterostructure. Heterostructures graphene-ZnO and graphene-phosphorene have almost zero-band gap. Binding energy between heterostructure layers was determined.
URI: https://libeldoc.bsuir.by/handle/123456789/34035
Appears in Collections:Публикации в зарубежных изданиях

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