|Title:||Electronic properties of graphene-based heterostructures|
|Authors:||Skachkova, V. A.|
Baranava, M. S.
Hvazdouski, D. C.
Stempitsky, V. R.
|Keywords:||публикации ученых;ab initio simulation;DFT;dichalcogenide;graphene;heterostructure;ZnS;ZnO|
|Citation:||Electronic properties of graphene-based heterostructures / V. A. Skachkova and other // Journal of Physics: Conference Series. – 2017. – 917. – P. 092012. – doi :10.1088/1742-6596/917/9/092012.|
|Abstract:||Heterostructures based on graphene were investigated by using density function theory (DFT). It is found that energy gap appear in ZnS-graphene heterostructure. Heterostructures graphene-ZnO and graphene-phosphorene have almost zero-band gap. Binding energy between heterostructure layers was determined.|
|Appears in Collections:||Публикации в зарубежных изданиях|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.