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Browsing by Author Hvazdouski, D. C.

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Showing results 1 to 12 of 12
Issue DateTitleAuthor(s)
2017Ab initio simulation of graphene interaction with SiO2 substrate for nanoelectronics applicationHvazdouski, D. C.; Stempitsky, V.
2018Ab initio simulation of graphene interaction with SiO2 substrate for nanoelectronics applicationHvazdouski, D. C.; Stempitsky, V. R.
2018Electronic and optic properties of transition metal dichalcogenides (MoS2, WSe2) and graphene heterostructuresBaranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R.; Volchek, S. A.; Najbuk, M.
2017Electronic properties of graphene-based heterostructuresSkachkova, V. A.; Baranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R.
2017Electronic properties of graphene-based heterostructuresSkachkova, V. A.; Baranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R.
2017Electrophysical properties of transition metals chalcogenides structures used as structural elements of the nanoelectronics devicesBaranava, M. S.; Najbuk, M.; Hvazdouski, D. C.; Stempitsky, V. R.
2021First-principles calculation of electronic properties of monoelement 2D materialsHvazdouski, D. C.; Stempitsky, V. R.
2021First-principles study of stability and electronic properties of single-element 2D materialsHvazdouski, D. C.
2020GaN HEMT Thermal Characteristics Evaluation Using an Integrated Approach Based on the Combined Use of First-Principles and Device SimulationsBaranava, M. S.; Hvazdouski, D. C.; Volcheck, V. S.; Stempitsky, V. R.; Dinh, D.; Tran Tuan, T.
2020Magnetic interactions in Cr2Ge2Te6 and Cr2Si2Te6 monolayers: ab initio studyBaranava, M. S.; Hvazdouski, D. C.; Skachkova, V. A.; Stempitsky, V. R.; Danilyuk, A. L.
2018Spin splitting in band structures of BiTeX (X=Cl, Br, I) monolayersHvazdouski, D. C.; Baranava, M. S.; Stempitsky, V. R.
2021Temperature dependence of the thermal conductivity of wurtzite aluminum nitride, gallium nitride and aluminum-gallium nitrideVolcheck, V. S.; Hvazdouski, D. C.; Baranava, M. S.; Stempitsky, V. R.