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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/10529
Title: Negative differential resistance in n-type noncompensated silicon at low temperature
Authors: Prischepa, S. L.
Danilyuk, A. L.
Trafimenko, A. G.
Fedotov, A. K.
Svito, I. A.
Keywords: публикации ученых;variable range hopping;charge accumulation;upper Hubbard band
Issue Date: 2016
Publisher: American Institute of Physics
Citation: Prischepa S. L. Negative differential resistance in n-type noncompensated silicon at low temperature / S. L. Prischepa and other // Applied Physics Letters. - 2016. - Vol. 109, No. 22. - Р. 222104 (1-4).
Abstract: We present the results on low temperature current-voltage characteristics of noncompensated Si doped by Sb. In the temperature range 1.9–2.25K and at electrical fields smaller than 1 V/cm, the negative differential resistance (NDR) was observed. The external magnetic field enhances the region of the NDR. We attribute this effect to the delocalization of the D- states in the upper Hubbard band due to the accumulation of the charge injected by current.
URI: https://libeldoc.bsuir.by/handle/123456789/10529
Appears in Collections:Публикации в зарубежных изданиях

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