https://libeldoc.bsuir.by/handle/123456789/10529| Title: | Negative differential resistance in n-type noncompensated silicon at low temperature |
| Authors: | Danilyuk, A. L. Trafimenko, A. G. Fedotov, A. K. Svito, I. A. Prischepa, S. L. |
| Keywords: | публикации ученых;variable range hopping;charge accumulation;upper Hubbard band |
| Issue Date: | 2016 |
| Publisher: | American Institute of Physics |
| Citation: | Negative differential resistance in n-type noncompensated silicon at low temperature / A. L. Danilyuk [et al.] // Applied Physics Letters. – 2016. – Vol. 109, No. 22. – Р. 222104. |
| Abstract: | We present the results on low temperature current-voltage characteristics of noncompensated Si doped by Sb. In the temperature range 1.9–2.25K and at electrical fields smaller than 1 V/cm, the negative differential resistance (NDR) was observed. The external magnetic field enhances the region of the NDR. We attribute this effect to the delocalization of the D- states in the upper Hubbard band due to the accumulation of the charge injected by current. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/10529 |
| DOI: | https://doi.org/10.1063/1.4968825 |
| Appears in Collections: | Публикации в зарубежных изданиях |
| File | Description | Size | Format | |
|---|---|---|---|---|
| 280919.pdf | 1.6 MB | Adobe PDF | View/Open |
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