|Title:||Negative differential resistance in n-type noncompensated silicon at low temperature|
|Authors:||Prischepa, S. L.|
Danilyuk, A. L.
Trafimenko, A. G.
Fedotov, A. K.
Svito, I. A.
|Keywords:||публикации ученых;variable range hopping;charge accumulation;upper Hubbard band|
|Publisher:||American Institute of Physics|
|Citation:||Prischepa S. L. Negative differential resistance in n-type noncompensated silicon at low temperature / S. L. Prischepa and other // Applied Physics Letters. - 2016. - Vol. 109, No. 22. - Р. 222104 (1-4).|
|Abstract:||We present the results on low temperature current-voltage characteristics of noncompensated Si doped by Sb. In the temperature range 1.9–2.25K and at electrical fields smaller than 1 V/cm, the negative differential resistance (NDR) was observed. The external magnetic field enhances the region of the NDR. We attribute this effect to the delocalization of the D- states in the upper Hubbard band due to the accumulation of the charge injected by current.|
|Appears in Collections:||Публикации в зарубежных изданиях|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.