Skip navigation
Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/11371
Title: X-ray diffractometry of Si epilayers grown on porous silicon
Authors: Lamedica, G.
Balucani, M.
Ferrari, A.
Bondarenko, V. P.
Yakovtseva, V. A.
Dolgyi, L.
Keywords: публикации ученых;porous silicon;epilayer;x-ray diffractometry;lattice deformation
Issue Date: 2002
Publisher: Elsevier
Citation: Lamedica, G. X-ray diffractometry of Si epilayers grown on porous silicon / G. Lamedica and others // Materials Science and Engineering: B. – 2002. - Vols 91–92. - P. 445 – 448.
Abstract: X-ray double-crystal diffractometry was used to measure lattice deformation of porous silicon (PS) and Si epitaxial layers grown on PS. PS layers 1-10 m in thickness and 15-65% in porosity were formed by anodization of n+-type Sb doped Si wafers in the 12% HF aqueous solution. Lattice deformation of both PS and epitaxial layers are shown to strongly depend on PS porosity. Grown on uniform PS 40-60% in porosity, the epilayers, single-crystal as they are, display high lattice deformation and defect density. Epilayers grown on two-layer PS are comparable with the films grown on the n+-type single-crystal Si substrate.
URI: https://libeldoc.bsuir.by/handle/123456789/11371
Appears in Collections:Публикации в зарубежных изданиях

Files in This Item:
File Description SizeFormat 
X-ray diffractometry of Si epilayers.docx15.63 kBMicrosoft Word XMLView/Open
Show full item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.