|Title:||X-ray diffractometry of Si epilayers grown on porous silicon|
Bondarenko, V. P.
Yakovtseva, V. A.
|Keywords:||публикации ученых;porous silicon;epilayer;x-ray diffractometry;lattice deformation|
|Citation:||Lamedica, G. X-ray diffractometry of Si epilayers grown on porous silicon / G. Lamedica and others // Materials Science and Engineering: B. – 2002. - Vols 91–92. - P. 445 – 448.|
|Abstract:||X-ray double-crystal diffractometry was used to measure lattice deformation of porous silicon (PS) and Si epitaxial layers grown on PS. PS layers 1-10 m in thickness and 15-65% in porosity were formed by anodization of n+-type Sb doped Si wafers in the 12% HF aqueous solution. Lattice deformation of both PS and epitaxial layers are shown to strongly depend on PS porosity. Grown on uniform PS 40-60% in porosity, the epilayers, single-crystal as they are, display high lattice deformation and defect density. Epilayers grown on two-layer PS are comparable with the films grown on the n+-type single-crystal Si substrate.|
|Appears in Collections:||Публикации в зарубежных изданиях|
|X-ray diffractometry of Si epilayers.docx||15.63 kB||Microsoft Word XML||View/Open|
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