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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/29371
Title: Formation of Nanostructured Films of Polycrystalline Silicon Doped with Germanium
Authors: Kovalevskii, A. A.
Strogova, A. S.
Komar, O. M.
Keywords: публикации ученых;polycrystalline silicon;germanium;nanoclusters
Issue Date: 2017
Publisher: Nova Science Publishers, INC, USA
Citation: Kovalevskii, A. A. Formation of Nanostructured Films of Polycrystalline Silicon Doped with Germanium / A. A. Kovalevskii, A. S. Strogova, O. M. Komar // Polycrystalline Films: Characteristics, Applications and Research, editor Alfred L. Davis. Book. – 2017. – Chapter 3. – Р. 59 – 74.
Abstract: The impact of germanium as isovalent impurity on the process of formation of nanostructured films of polycrystalline silicon doped with germanium is investigated.
URI: https://libeldoc.bsuir.by/handle/123456789/29371
Appears in Collections:Публикации в зарубежных изданиях

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