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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/33067
Title: Fullerene-based systems as components of nanoelectronic devices
Authors: Britch, M.
Dobrego, K. V.
Krasovskaya, L.
Keywords: материалы конференций;current–voltage characteristics;Landauer approach
Issue Date: 2013
Publisher: БГУИР
Citation: Britch, M. Fullerene-based systems as components of nanoelectronic devices / M. Britch, Dobrego K. V., L. Krasovskaya // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 55 – 56.
Abstract: The electric conduction of a single fullerene molecule and chains of fullerenes placed between two metal electrodes was simulated. The electric current was calculated as a function of the bias voltage using the Landauer approach, which connects charge transport with the transmission of electrons. To obtain the transmission function, the supplementary problem of the electron tunneling coupled with its scattering by the fullerenes was solved. It has been shown that the current - voltage characteristics of such structures can have negative-conductance regions that makes it possible to use them as active components of nanoelectronic devices. As an example, the operation of the oscillator including the single fullerene-based component has been demonstrated. The interpretation of the phenomenon has been discussed.
URI: https://libeldoc.bsuir.by/handle/123456789/33067
Appears in Collections:NDTCS 2013

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