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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/33946
Title: Formation of metal-oxide film nanostructures based on anodic alumina with uniformly distributed nanoscale Ta inclusions and their electrical properties
Authors: Chernyakova, E. V.
Vrublevsky, I. A.
Muratova, E. N.
Moshnikov, V. A.
Keywords: публикации ученых;anodic aluminum oxide;temperature coefficient of resistance
Issue Date: 2018
Publisher: Institute of Physics and IOP Publishing Limited
Citation: Formation of metal-oxide film nanostructures based on anodic alumina with uniformly distributed nanoscale Ta inclusions and their electrical properties / Chernyakova E. V. and other // IJournal of Physics: Conf. Series 1121 012010. – 2018. – doi :10.1088/1742-6596/1121/1/012010.
Abstract: The paper presents the results of studies of the formation of film-metal oxide nanostructures with islet tantalum inclusions on the basis of anodizing processes of bilayer Ta- Al films. The surface resistivity and the temperature coefficient of resistance of such nanostructures were studied. The results obtained show that the proposed method allows us to copy completely the cellular-porous structure of anodic alumina and to form a nanostructured tantalum film of islet character with a dielectric phase in places of pores.
URI: https://libeldoc.bsuir.by/handle/123456789/33946
Appears in Collections:Публикации в зарубежных изданиях

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