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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/37558
Title: Electronic properties of WS2/WSe2 heterostructure containing Te impurity: the role of substituting position
Authors: Krivosheeva, A. V.
Shaposhnikov, V. L.
Borisenko, V. E.
Lazzari, J. L.
Кривошеева, А. В.
Шапошников, В. Л.
Борисенко, В. Е.
Keywords: публикации ученых
2D heterostructure
dichalcogenide
electronic property
impurity
substituting position
Issue Date: 2019
Publisher: World Scientic Publishing Company, Singapore
Citation: Electronic properties of WS2/WSe2 heterostructure containing Te impurity: the role of substituting position / A. V. Krivosheeva, V. L. Shaposhnikov, V. E. Borisenko, J.-L. Lazzari // International Journal of Nanoscience. – 2019. – Vol. 18, № 3-4. – P. 1940007-1-1940007-4. – DOI : 10.1142/S0219581X19400076.
Abstract: An impact of positions of Te atoms substituting W atoms in two-dimensional WS2/WSe2 heterostructures on their electronic properties is investigated by theoretical simulation. The substitution of W by Te tends to reduce the energy band gap and can lead to metallic properties depending on the impurity position and concentration.
URI: https://libeldoc.bsuir.by/handle/123456789/37558
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