Photocurrent hysterisis of strontium titanate formed on silicon by sol-gel method

Abstract

SrTiO3 and SrTiO3:Nd films of 110nm and 210nm thickness were fabricated using the sol–gel technology on silicon. Their current–voltage characteristics were investigated with and without illumination. The film structures are photosensitive and exhibit the hysteresis on the forward and reverse bias with loop broadening at the reverse part.