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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/38929
Title: Low temperature injected-caused charge carrier instability in n-type silicon below insulator-to-metal transition
Authors: Danilyuk, A. L.
Prischepa, S. L.
Trafimenko, A. G.
Fedotov, A. K.
Svito, I. A.
Kargin, N. I.
Данилюк, А. Л.
Keywords: публикации ученых
charge carrier instability
correlated electron system
upper Hubbard band
delocalization
Issue Date: 2020
Publisher: Institute of Physics, Великобритания
Citation: Low temperature injected-caused charge carrier instability in n-type silicon below insulator-to-metal transition / A. L. Danilyuk [and other] // Journal of Physics Condensed Matter. – 2020. – Vol. 32. – P. 225702 (1-10). – 10.1088/1361-648X/ab720e.
Abstract: We report on the electric transport properties of Si heavily doped with Sb at concentration just below the insulator-to-metal transition in the temperature range 1.9 – 3.0 K for current density J < 0.2 A/cm2.
URI: https://libeldoc.bsuir.by/handle/123456789/38929
Appears in Collections:Публикации в зарубежных изданиях

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