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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/41633
Title: Internal Stress in Aluminum Layers Deposited on Dielectric Substrates
Authors: Shulgov, V. V.
Shimanovich, D. L.
Yakovtseva, V. A.
Basov, G.
Keywords: публикации ученых;anodic alumina;membrane;light scattering;light propagation
Issue Date: 2020
Publisher: International Frequency Sensor Association (IFSA) Publishing, S. L., Испания
Citation: Internal Stress in Aluminum Layers Deposited on Dielectric Substrates / Shulgov V. [et al.] // Microelectronic Devices and Technologies Proceedings of the 3 rd International Conference on Microelectronic Devices and Technologies (MicDAT '2020), 22–23 October 2020 / ed.: S. Y. Yurish. – Barcelona, 2020. – P. 51–52.
Abstract: The analysis of the internal stress in deposited aluminum layers is demonstrated and dependences of the internal stresses on the thickness of the aluminum films deposited at various substrate temperatures and evaporation rates are studied. The study may be applied to fabricate the nanoporous alumina coatings for different kinds of high-sensitive sensors.
URI: https://libeldoc.bsuir.by/handle/123456789/41633
Appears in Collections:Публикации в зарубежных изданиях

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