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Title: Structural and Photoluminescence Properties of Graphite-Like Carbon Nitride
Authors: Baglov, A. V.
Chubenko, E. B.
Hnitsko, A. A.
Borisenko, V. E.
Malashevich, A. A.
Uglov, V. V.
Чубенко, Е. Б.
Баглов, А. В.
Чубенко, Е. Б.
Гнитько, А. А.
Борисенко, В. Е.
Малашевич, А. А.
Углов, В. В.
Keywords: публикации ученых
graphite-like carbon nitride
Issue Date: 2020
Publisher: Pleiades Publishing, Великобритания
Citation: Structural and Photoluminescence Properties of Graphite-Like Carbon Nitride / A. V. Baglov [et. al.] // Semiconductors. – 2020. – Vol. 54, №. 2. – P. 226–230. – DOI: 10.1134/S1063782620020049.
Abstract: Interrelationship between the structure and optical properties of graphite-like semiconductor carbon nitride produced by the heat treatment of thiocarbamide in an oxygen-containing medium at temperatures in the range from 400C to 625C is established. It is found that the maximum of the photoluminescence band shifts from 417 to 494 nm and simultaneously broadens, as the temperature of synthesis is elevated to 625C. This effect is attributed to doping with oxygen and to the formation of defects as a consequence of decomposition of the already synthesized material with increasing temperature.
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