| Title: | The influence of region sizes on the current-voltage characteristics of graphene-based four-barrier resonant tunnel structures |
| Authors: | Polyakov, I. S. |
| Keywords: | материалы конференций;tunnel structures;current-voltage characteristics;graphene |
| Issue Date: | 2021 |
| Publisher: | БГУИР |
| Citation: | Polyakov, I. S. The influence of region sizes on the current-voltage characteristics of graphene-based four-barrier resonant tunnel structures / I. S. Polyakov // Электронные системы и технологии : сборник материалов 57-й научной конференции аспирантов, магистрантов и студентов БГУИР, Минск, 19-23 апреля 2021 г. / Белорусский государственный университет информатики и радиоэлектроники ; редкол.: Д. В. Лихаческий [и др.]. – Минск, 2021. – С. 129–130. |
| Abstract: | This article discusses the concept, essence, and application areas of graphene-based four-barrier resonant tunnel structures. The purpose of this paper is to study the influence of various technological parameters on the electrical characteristics of the structure. The current-voltage characteristics of graphene-based resonant tunnel structures on silicon dioxide (SiO2) and hexagonal boron nitride (h-BN) substrates are modeled for different barrier widths and quantum wells. The calculations that were carried out using a numerical model based on the Schrodinger equation are presented. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/43412 |
| Appears in Collections: | Электронные системы и технологии : материалы 57-й конференции аспирантов, магистрантов и студентов (2021)
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