Skip navigation
Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/45804
Title: Schottky barrier height and ideality factor of CVD graphene/n-Si heterojunction
Authors: Golovach, A. I.
Kovalchuk, N. G.
Mikhalik, M. M.
Kukuts, Y.
Dronina, L.
Komissarov, I. V.
Prischepa, S. L.
Keywords: материалы конференций;conference proceedings;graphene;Schottky barrier
Issue Date: 2021
Publisher: БГУИР
Citation: Schottky barrier height and ideality factor of CVD graphene/n-Si heterojunction / A. Golovach [et. al.] // Nano-Desing, Tehnology, Computer Simulations=Нанопроектирование, технология, компьютерное моделирование (NDTCS-2021) : тезисы докладов XIX Международного симпозиума, Минск, 28-29 октября 2021 года / Белорусский государственный университет информатики и радиоэлектроники ; редкол.: В. А. Богуш [и др.]. – Минск, 2021. – P. 91–93.
Abstract: Due to high optical transparency and high charge mobility graphene emerges as a perspective material for transparent electrode in photodetectors. It made a new turn in using novel 2D materials in combination with the standard silicon technology.
URI: https://libeldoc.bsuir.by/handle/123456789/45804
Appears in Collections:NDTCS 2021

Files in This Item:
File Description SizeFormat 
Golovach_Schottky.pdf677.73 kBAdobe PDFView/Open
Show full item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.