https://libeldoc.bsuir.by/handle/123456789/45804| Title: | Schottky barrier height and ideality factor of CVD graphene/n-Si heterojunction |
| Authors: | Golovach, A. I. Kovalchuk, N. G. Mikhalik, M. M. Kukuts, Y. Dronina, L. Komissarov, I. V. Prischepa, S. L. |
| Keywords: | материалы конференций;conference proceedings;graphene;Schottky barrier |
| Issue Date: | 2021 |
| Publisher: | БГУИР |
| Citation: | Schottky barrier height and ideality factor of CVD graphene/n-Si heterojunction / A. Golovach [et. al.] // Nano-Desing, Tehnology, Computer Simulations=Нанопроектирование, технология, компьютерное моделирование (NDTCS-2021) : тезисы докладов XIX Международного симпозиума, Минск, 28-29 октября 2021 года / Белорусский государственный университет информатики и радиоэлектроники ; редкол.: В. А. Богуш [и др.]. – Минск, 2021. – P. 91–93. |
| Abstract: | Due to high optical transparency and high charge mobility graphene emerges as a perspective material for transparent electrode in photodetectors. It made a new turn in using novel 2D materials in combination with the standard silicon technology. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/45804 |
| Appears in Collections: | NDTCS 2021 |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Golovach_Schottky.pdf | 677.73 kB | Adobe PDF | View/Open |
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