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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/45847
Title: The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs
Authors: Lovshenko, I.
Voronov, A.
Roshchenko, P. S.
Ternov, R.
Stempitsky, V. R.
Keywords: материалы конференций;conference proceedings;the proton flux;experimental data
Issue Date: 2021
Publisher: БГУИР, РБ
Citation: The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs / I. Lovshenko [et. al.] // Nano-Desing, Tehnology, Computer Simulations=Нанопроектирование, технология, компьютерное моделирование (NDTCS-2021) : тезисы докладов XIX Международного симпозиума, Минск, 28-29 октября 2021 года / Белорусский государственный университет информатики и радиоэлектроники ; редкол.: В. А. Богуш [и др.]. – Минск, 2021. – P. 66–68.
Abstract: The model of the dependence of NIEL on the proton energy with different values of threshold energy of defect formation for GaAs and AlGaAs, that are described in the literature and comply with the latest theoretical and experimental data, has been developed.
URI: https://libeldoc.bsuir.by/handle/123456789/45847
Appears in Collections:NDTCS 2021

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