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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/46446
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dc.contributor.authorQian Ma-
dc.contributor.authorLetao Zhang-
dc.contributor.authorShengdong Zhang-
dc.date.accessioned2021-12-23T08:20:43Z-
dc.date.available2021-12-23T08:20:43Z-
dc.date.issued2019-
dc.identifier.citationQian Ma. Robust performance and stability of In2Оз thin-film transistors with atomic-layer-deposited channels / Qian Ma, Letao Zhang, Shengdong Zhang // Eurodisplay 2019 : Book of abstracts of International Conference, Minsk, September 16-20, 2019 / Society for Information Display, Belarusian State University of Informatics and Radioelectronics ; ed.: V. A. Bogush [et al.]. – Minsk, 2019. – P. 87.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/46446-
dc.description.abstractAtomic-layer-deposition (ALD) ln20 3 thinfilm transistors (TFTs) were fabricated under a maximum processing temperature of 200 °C. In order to reduce the concentration of oxygen vacancies in the ln20 3 channel, 0 2 plasma treatment was carried out on the TFTs by plasmaenhanced chemical vapor deposited (PECVD). The ln20 3 TFT treated at 200 °C for 240s exhibited good performance such as a field-effect mobility of 11 cm2/Vs, a threshold voltage (Vth) of 0.9 V, a subthreshold swing of 0.38 V/dec, and an on/off current ratio of 107 In addition, the device exhibits a small negative threshold voltage shift (A Vth) during negative gate bias stress. However, it showed a more pronounced A Vth under positive bias stress with a characteristic turnaround behavior from a positive A Vth to a negative A Vth. The positive AV m is attributed to the charge trapping effect, and the abnormal negative AVth should due to the hydrogen incorporated into the film.ru_RU
dc.language.isoenru_RU
dc.publisherБГУИРru_RU
dc.subjectматериалы конференцийru_RU
dc.subjectthinfilm transistorsru_RU
dc.subjectAtomic-layer-depositionru_RU
dc.titleRobust performance and stability of In2Оз thin-film transistors with atomic-layer-deposited channelsru_RU
dc.typeСтатьяru_RU
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