|Title:||Ab initio calculations of electronic band structure of CdMnS semimagnetic semiconductors|
|Authors:||Mehrabova, M. A.|
Panahov, N. T.
Hasanov, N. H.
|Keywords:||доклады БГУИР;Ab initio calculations;DFT;semimagnetic semiconductors;electronic band structure;vacancy|
|Citation:||Mehrabova, M. А. Ab initio calculations of electronic band structure of CdMnS semimagnetic semiconductors / Mehrabova M. А., Panahov N. T., Hasanov N. H. // Доклады БГУИР. – 2021. – № 19(8). – С. 45–49. – DOI : http://dx.doi.org/10.35596/1729-7648-2021-19-8-45-49.|
|Abstract:||This work is devoted to theoretical investigations of Cd1-xMnxS semimagnetic semiconductors (SMSC). The purpose of this work was to calculate the electronic band structure of ideal and defective Cd1-xMnxS SMSC in both antiferromagnetic (AFM) and ferromagnetic (FM) phases. Ab initio, calculations are performed in the Atomistix Toolkit (ATK) program within the Density Functional Theory (DFT) and Local Spin Density Approximation (LSDA) on Double Zeta Double Polarized (DZDP) basis. We have used Hubbard U potential UMn = 3.59 eV for 3d states for Mn atoms. Supercells of 8 and 64 atoms were constructed. After the construction of Cd1-xMnxS (x = 6.25 %; 25 %) supercells and atom relaxation and optimization of the crystal structure were carried out. Electronic band structure and density of states were calculated, the total energy has been defined in antiferromagnetic (AFM) and ferromagnetic (FM) phases. Our calculations show that the band gap increases with the increase in Mn ion concentration. It has been established that Cd or S vacancy in the crystal structure leads to the change of band gap, Fermi level shifts towards the valence or conduction band.|
|Appears in Collections:||№ 19(8)|
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