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Title: Computer simulation of the operational characteristics of a microstrip silicon detector
Authors: Ha Dinh Dao
Lovshenko, I. Yu.
Roshchenko, P. S.
Shandarovich, V. T.
Stempitsky, V. R.
Tuan Trung Tran
Keywords: публикации ученых;linear energy transfer;microstrip detector;radiation;single event upset;technological and device simulation
Issue Date: 2021
Publisher: IOP Publishing
Citation: Computer simulation of the operational characteristics of a microstrip silicon detector / Ha Dinh Dao [et al.] // Semiconductor Science and Technology. – 2021. – Vol. 36, № 9. – P. 1. – DOI : 10.1088/1361-6641/ac09cf.
Abstract: This paper presents the results of preliminary device and technological simulation and optimization of the operational characteristics of semiconductor microstrip detectors. We investigated the influence of heavy charged particles with linear energy transfers of 1.81 MeV cm2 mg−1, 18.8 MeV cm2 mg−1 and 55.0 MeV cm2 mg−1, corresponding to nitrogen 15N+4 ions with an energy E = 1.87 MeV, iron 56Fe+15 ions with an energy E = 523 MeV and xenon 131Xe+35 ions with an energy E = 1217 MeV, as well as the angle of incidence of the particles and the temperature and voltage on the substrate, on the characteristics of the detector. To improve the characteristics of the detector, a screening experiment was carried out and a series of optimization calculations were performed. The results will be used for the manufacture and testing of design parameters for an experimental batch of the investigated devices.
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