A new approach for producing of film structures based on Si1-xGex

Abstract

In this work, we propose a new, previously unpresented in the literature, approach to the formation of Si1-xGex films. This approach includes electrochemical processes of the formation of porous silicon, electrochemical deposition of low-melting metals and Ge. Post-heat treatment is made possible to synthesize film structures based on Si1-xGex solid solutions. Using this approach an alloy of the composition Si0.4Ge0.6 has been obtained at a lower formation temperature than predicted by the phase diagram for the Si-Ge system.