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Title: A new approach for producing of film structures based on Si1-xGex
Authors: Gavrilin, I. M.
Grevtsov, N. L.
Pavlikov, A.V.
Dronov, A. A.
Chubenko, E. B.
Bondarenko, V. P.
Gavrilov, S. A.
Keywords: публикации ученых;electrodeposition;Si1-xGex films;germanium nanowires;porous silicon
Issue Date: 2022
Publisher: Elsevier
Citation: A new approach for producing of film structures based on Si-Ge / Gavrilin I. M. [et al.] // Materials Letters. – 2022. – Vol. 313. – P. 1–4. – DOI : 10.1016/j.matlet.2022.131802.
Abstract: In this work, we propose a new, previously unpresented in the literature, approach to the formation of Si1-xGex films. This approach includes electrochemical processes of the formation of porous silicon, electrochemical deposition of low-melting metals and Ge. Post-heat treatment is made possible to synthesize film structures based on Si1-xGex solid solutions. Using this approach an alloy of the composition Si0.4Ge0.6 has been obtained at a lower formation temperature than predicted by the phase diagram for the Si-Ge system.
Appears in Collections:Публикации в зарубежных изданиях

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