https://libeldoc.bsuir.by/handle/123456789/49603| Title: | Quantum drift-diffusion models for dual-gate field-effect transistors based on mono- and bilayer graphene |
| Authors: | Abramov, I. I. Labunov, V. A. Kalameitsava, N. V. Romanova, I. A. Shcherbakova, I. Y. |
| Keywords: | публикации ученых;field-effect transistor;monolayer graphene;bilayer graphene;simulation;output characteristics |
| Issue Date: | 2022 |
| Publisher: | International Society for Optical Engineering |
| Citation: | Quantum drift-diffusion models for dual-gate field-effect transistors based on mono- and bilayer graphene / Abramov I. I. [et al.] // Proc. of SPIE. – Vol. 12157. – P. 121570X-1-6. – DOI : https://doi.org/10.1117/12.2622451. |
| Abstract: | At present, a great deal of interest is observed in devices based on two-dimentional (2D) materials, especially graphene, in the field of micro- and nanoelectronics. Graphene has robust hoheycomb lattice structure and unique properties such as ambipolarity, high carrier mobility, high conductivity. Nevertheless the properties of mono- and bilayer graphene are different. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/49603 |
| Appears in Collections: | Публикации в зарубежных изданиях |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Abramov_Quantum.pdf | 77.92 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.