|Title:||Quantum drift-diffusion models for dual-gate field-effect transistors based on mono- and bilayer graphene|
|Authors:||Abramov, I. I.|
Labunov, V. A.
Kalameitsava, N. V.
Romanova, I. A.
Shcherbakova, I. Y.
|Keywords:||публикации ученых;field-effect transistor;monolayer graphene;bilayer graphene;simulation;output characteristics|
|Publisher:||International Society for Optical Engineering|
|Citation:||Quantum drift-diffusion models for dual-gate field-effect transistors based on mono- and bilayer graphene / Abramov I. I. [et al.] // Proc. of SPIE. – Vol. 12157. – P. 121570X-1-6. – DOI : https://doi.org/10.1117/12.2622451.|
|Abstract:||At present, a great deal of interest is observed in devices based on two-dimentional (2D) materials, especially graphene, in the field of micro- and nanoelectronics. Graphene has robust hoheycomb lattice structure and unique properties such as ambipolarity, high carrier mobility, high conductivity. Nevertheless the properties of mono- and bilayer graphene are different.|
|Appears in Collections:||Публикации в зарубежных изданиях|
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