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Title: Simulation of various nanoelectronic devices based on 2D materials
Authors: Abramov, I. I.
Labunov, V. A.
Kalameitsava, N. V.
Romanova, I. A.
Shcherbakova, I. Y.
Keywords: публикации ученых;field-effect transistor;resonant tunneling diode;numerical simulation
Issue Date: 2022
Publisher: International Society for Optical Engineering
Citation: Simulation of various nanoelectronic devices based on 2D materials / Abramov I. I. [et al.] // Proc. of SPIE. – Vol. 12157. – P. 121570U-1-9. – DOI :
Abstract: The development of field-effect transistors (FETs), resonant- tunneling diodes (RTDs), vertical heterostructures and other device structures on the basis of 2D materials is one of the important tasks for producing a new element base for micro and nanoelectronics.
Appears in Collections:Публикации в зарубежных изданиях

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