https://libeldoc.bsuir.by/handle/123456789/49605| Title: | Simulation of various nanoelectronic devices based on 2D materials |
| Authors: | Abramov, I. I. Labunov, V. A. Kalameitsava, N. V. Romanova, I. A. Shcherbakova, I. Y. |
| Keywords: | публикации ученых;field-effect transistor;resonant tunneling diode;numerical simulation |
| Issue Date: | 2022 |
| Publisher: | International Society for Optical Engineering |
| Citation: | Simulation of various nanoelectronic devices based on 2D materials / Abramov I. I. [et al.] // Proc. of SPIE. – Vol. 12157. – P. 121570U-1-9. – DOI : https://doi.org/10.1117/12.2622445. |
| Abstract: | The development of field-effect transistors (FETs), resonant- tunneling diodes (RTDs), vertical heterostructures and other device structures on the basis of 2D materials is one of the important tasks for producing a new element base for micro and nanoelectronics. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/49605 |
| Appears in Collections: | Публикации в зарубежных изданиях |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Abramov_Simulation.pdf | 78.54 kB | Adobe PDF | View/Open |
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