Formation of a dielectric material derived from oxidized porous silicon and titanium oxide for integrated optical waveguides

Abstract

Feasibility is demonstrated for obtaining a dielectric material derived from oxidized porous silicon and titanium oxide by depositing the latter onto porous silicon using a sol-gel method followed by high-temperature oxidation. The resulting dielectric material has an enhanced refractive index, making it promising for creating low-loss integrated optical channel waveguides in bulk microassemblies of electronic circuits with optical interconnects.