Skip navigation

Просмотр собрания по группе - Авторы Khanko, V. T.

Перейти к: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
А Б В Г Д Е Ж З И Й К Л М Н О П Р С Т У Ф Х Ц Ч Ш Щ Ъ Ы Ь Э Ю Я
 
Результаты 2 по 5 из 5 < назад 
Дата публикацииНазваниеАвтор(ы)
2017Investigation of the radiations effect on the electrical characteristics of a junction field-effect transistorDvornikov, O. V.; Lovshenko, I.; Stempitsky, V.; Khanko, V. T.
2017Optimization of structural and technological parameters of junction field-effect transistor with increased radiation hardnessDvornikov, O. V.; Lovshenko, I.; Stempitsky, V.; Khanko, V. T.
2019Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiationLovshenko, I. Yu.; Khanko, V. T.; Stempitsky, V. R.
2019Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device StructureDao Dinh Ha; Tran Tuan Trung; Nguyen Trong Quang; Lovshenko, I.; Khanko, V. T.; Stempitsky, V.