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Browsing by Author Lovshenko, I. Yu.

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Issue Date	Title	Author(s)
2023	Design and Performance of Amorphous Silicon Based on Uncooled Bolometer-Type Infrared Focal Plane Arrays	Tran Van Trieu; Stempitsky, V. R.; Lovshenko, I. Yu.; Korsak, K. V.; Dao Dinh Ha
2021	Design optimization of the gallium nitride heterostructure field-effect transistor with a graphene heat-removal system	Volcheck, V. S.; Lovshenko, I. Yu.; Stempitsky, V. R.
2013	Device and technology simulation of IGBT on SOI structure	Lovshenko, I. Yu.; Nelayev, V. V.; Belous, A. I.; Turtsevich, A.
2019	Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation	Lovshenko, I. Yu.; Khanko, V. T.; Stempitsky, V. R.
2021	Studying the influence of microbolometer structure and geometry on the parameters of infrared detectors	Tran Van Trieu; Lovshenko, I. Yu.; Sadchenko, V.; Stempitsky, V. R.
2021	The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs	Lovshenko, I. Yu.; Voronov, A. Yu.; Roshchenko, P. S.; Ternov, R. E.; Galkin, Y. D.; Kunts, A. V.; Stempitsky, V. R.; Jinshun Bi
2023	Расчет оптических параметров тонких пленок конструкционных материалов теплового неохлаждаемого детектора болометрического типа	Tran Van Trieu; Korsak, K. V.; Novikov, P. E.; Lovshenko, I. Yu.; Zavadski, S. M.; Golosov, D. A.; Stepanov, A. A.; Hubarevich, A. А.; Kolos, V. V.; Solovjov, Ya. A.; Liauchuk, D. S.; Stempitsky, V. R.

Showing results 2 to 8 of 8 < previous