https://libeldoc.bsuir.by/handle/123456789/46650| Title: | The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs |
| Authors: | Lovshenko, I. Yu. Voronov, A. Yu. Roshchenko, P. S. Ternov, R. E. Galkin, Y. D. Kunts, A. V. Stempitsky, V. R. Jinshun Bi |
| Keywords: | доклады БГУИР;HEMT;GaAs;proton fluence;displacement effects;nonionizing energy loss;simulation |
| Issue Date: | 2021 |
| Publisher: | БГУИР |
| Citation: | The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs / Lovshenko I. Yu. [et al.] // Доклады БГУИР. – 2021. – № 19(8). – С. 81–86. – DOI : http://dx.doi.org/10.35596/1729-7648-2021-19-8-81-86. |
| Abstract: | The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/46650 |
| Appears in Collections: | № 19(8) |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Lovshenko_The.pdf | 923.39 kB | Adobe PDF | View/Open |
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