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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/46650
Title: The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs
Authors: Lovshenko, I. Yu.
Voronov, A. Yu.
Roshchenko, P. S.
Ternov, R. E.
Galkin, Y. D.
Kunts, A. V.
Stempitsky, V. R.
Jinshun Bi
Keywords: доклады БГУИР;HEMT;GaAs;proton fluence;displacement effects;nonionizing energy loss;simulation
Issue Date: 2021
Publisher: БГУИР
Citation: The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs / Lovshenko I. Yu. [et al.] // Доклады БГУИР. – 2021. – № 19(8). – С. 81–86. – DOI : http://dx.doi.org/10.35596/1729-7648-2021-19-8-81-86.
Abstract: The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.
URI: https://libeldoc.bsuir.by/handle/123456789/46650
Appears in Collections:№ 19(8)

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