|Title:||The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs|
|Authors:||Lovshenko, I. Yu.|
Voronov, A. Yu.
Roshchenko, P. S.
Ternov, R. E.
Galkin, Y. D.
Kunts, A. V.
Stempitsky, V. R.
|Keywords:||доклады БГУИР;HEMT;GaAs;proton fluence;displacement effects;nonionizing energy loss;simulation|
|Citation:||The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs / Lovshenko I. Yu. [et al.] // Доклады БГУИР. – 2021. – № 19(8). – С. 81–86. – DOI : http://dx.doi.org/10.35596/1729-7648-2021-19-8-81-86.|
|Abstract:||The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.|
|Appears in Collections:||№ 19(8)|
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