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Browsing by Author Stempitsky, V. R.

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Showing results 1 to 20 of 59  next >
Issue DateTitleAuthor(s)
2018Ab initio simulation of graphene interaction with SiO2 substrate for nanoelectronics applicationHvazdouski, D. C.; Stempitsky, V. R.; Гвоздовский, Д. Ч.; Стемпицкий, В. Р.
2021Ab initio study of exchange interactions in the magnetic systems based on Cr2Ge2 X6 (X=S, Se, Te)Baranava, M. S.; Stempitsky, V. R.
2021Computer simulation of the operational characteristics of a microstrip silicon detectorHa Dinh Dao; Lovshenko, I. Yu.; Roshchenko, P. S.; Shandarovich, V. T.; Stempitsky, V. R.; Tuan Trung Tran; Ловшенко, И. Ю.; Рощенко, П. С.; Шандарович, В. Т.; Стемпицкий, В. Р.
2021Design and simulation of 3D magnetic field sensors with integrated magnetic concentratorDao Dinh Ha; Stempitsky, V. R.
2021Design optimization of the gallium nitride heterostructure field-effect transistor with a graphene heat-removal systemVolcheck, V. S.; Lovshenko, I. Yu.; Stempitsky, V. R.
2018Direct exchange interaction of cobalt chains in zinc oxide: model approachBaranava, M. S.; Danilyuk, A. L.; Stempitsky, V. R.; Баранова, М. С.; Данилюк, А. Л.; Стемпицкий, В. Р.
2018Electronic and optic properties of transition metal dichalcogenides (MoS2, WSe2) and graphene heterostructuresBaranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R.; Volchek, S. A.; Najbuk, M.; Баранова, М. С.; Гвоздовский, Д. Ч.; Стемпицкий, В. Р.; Волчек, С. А.
2017Electronic properties of graphene-based heterostructuresSkachkova, V. A.; Baranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R.; Скачкова, В. А.; Баранова, М. С.; Гвоздовский, Д. Ч.; Стемпицкий, В. Р.
2017Electronic properties of graphene-based heterostructuresSkachkova, V. A.; Baranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R.; Скачкова, В. А.; Баранова, М. С.; Гвоздовский, Д. Ч.; Стемпицкий, В. Р.
2017Electrophysical properties of transition metals chalcogenides structures used as structural elements of the nanoelectronics devicesBaranava, M. S.; Najbuk, M.; Hvazdouski, D. C.; Stempitsky, V. R.
2017Exchange interaction in zinc oxide doped by cobaltBaranava, M. S.; Danilyuk, A. L.; Stempitsky, V. R.
2021First-principles calculation of electronic properties of monoelement 2D materialsHvazdouski, D. C.; Stempitsky, V. R.
2020GaN HEMT Thermal Characteristics Evaluation Using an Integrated Approach Based on the Combined Use of First-Principles and Device SimulationsBaranаva, M. S.; Hvazdouski, D. C.; Volcheck, V. S.; Stempitsky, V. R.; Dinh, D.; Tran Tuan, T.; Баранова, М. С.; Гвоздовский, Д. Ч.; Волчек, В. С.; Стемпицкий, В. Р.
2019Iron-induced acceptor centers in the gallium nitride high electron mobility transistor: thermal simulation and analysisDao Dinh Ha; Trung Tran Tuan; Volcheck, V. S.; Stempitsky, V. R.
2022Large Signal Performance of The Gallium Nitride Heterostructure Field-Effect Transistor with a Graphene Heat-Removal SystemVolcheck, V. S.; Stempitsky, V. R.
2019Leakage current in AlGaN Schottky diode in terms of the phonon-assisted tunneling modelVolcheck, V. S.; Stempitsky, V. R.
2020Magnetic interactions in Cr2Ge2Te6 and Cr2Si2Te6 monolayers: ab initio studyBaranava, M. S.; Hvazdouski, D. C.; Skachkova, V. A.; Stempitsky, V. R.; Danilyuk, A. L.; Баранова, М. С.; Гвоздовский, Д. Ч.; Скачкова, В. А.; Стемпицкий, В. Р.; Данилюк, А. Л.
2019Mobility of a two-dimensional electron gas in the AlGaAs/GaAs heterostructure: simulation and analysisVolcheck, V. S.; Stempitsky, V. R.
2019Mobility of a two-dimensional electron gas in the AlGaN/GaN heterostructure: simulation and analysisVolcheck, V. S.; Stempitsky, V. R.
2017Parallel computing environment for digital devices simulation and VLSI topology verificationBelous, A. I.; Solodukha, V.; Shvedov, S.; Borovik, A. M.; Kostrov, A. I.; Stempitsky, V. R.