Skip navigation
Please use this identifier to cite or link to this item:
Title: Er-doped oxidized porous silicon waveguides
Authors: Balucani, M.
Bondarenko, V. P.
Lamedica, G.
Ferrari, A.
Yakovtseva, V. A.
Dolgyi, L.
Vorozov, N.
Volchek, S. A.
Petrovich, V. A.
Kazuchits, N.
Keywords: публикации ученых;erbium;porous silicon;optoelectronic devices
Issue Date: 2001
Publisher: Elsevier
Citation: Balucani, M. Er-doped oxidized porous silicon waveguides / M. Balucani and others // Thin Solid Films. – 2001. - Vol. 396. - P. 201 – 203.
Abstract: The present work reports Er-doped channel oxidized porous silicon waveguides (OPSWG) formed from n+-type Si by the two-step anodisation process. Er has been introduced into porous silicon before oxidation by a cathodic treatment in 0.1 M Er (NO3)3 aqueous solution. A correlation between Er concentration and refractive index profiles has shown dominant core doping with Er relative to cladding regions. Reported Er concentration of 0.8 at.% in the OPSWG is large enough to attain the amplification effect.
Appears in Collections:Публикации в зарубежных изданиях

Files in This Item:
File Description SizeFormat 
Er-doped.docx13.99 kBMicrosoft Word XMLView/Open
Show full item record

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.