Skip navigation
Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/11389
Title: Oxidized porous silicon: from dielectric isolation to integrated optical waveguides
Authors: Yakovtseva, V. A.
Dolgyi, L.
Kazuchits, N.
Vorozov, N.
Balucani, M.
Bondarenko, V. P.
Franchina, L.
Lamedica, G.
Ferrari, A.
Keywords: публикации ученых;oxidized porous silicon;anodization;oxidation;dielectric isolation;optical waveguide
Issue Date: 2000
Publisher: Kluwer Academic Publishers USA
Citation: Yakovtseva, V. Oxidized porous silicon: from dielectric isolation to integrated optical waveguides / V. Yakovtseva and others // Journal of Porous Materials. - 2000. - Vol. 7 (1). - Pp. 215-222. - DOI: 10.1023/A:1009647007232.
Abstract: A brief review of 20-years research of formation, processing and utilizing of oxidized porous silicon (OPS) is presented. Electrolytes to form porous silicon (PS) layers, special features of PS chemical cleaning and thermal oxidation are discussed. OPS application for dielectric isolation of components of bipolar ICs and for the formation of silicon-on-insulator structures has been demonstrated. Although these OPS-based techniques have found limited current commercial use, experience gained is applicable to the fabrication of optoelectronic devices. Specifically, integrated optical waveguides based on OPS have been developed.
URI: https://libeldoc.bsuir.by/handle/123456789/11389
Appears in Collections:Публикации в зарубежных изданиях

Files in This Item:
File Description SizeFormat 
Oxidized porous silicon.pdf501.45 kBAdobe PDFView/Open
Show full item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.