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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/11410
Title: Investigation of Morphology of Porous Silicon Formed on N+ Type Silicon
Authors: Lamedica, G.
Balucani, M.
Bondarenko, V. P.
Franchina, L.
Dolgyi, L.
Yakovtseva, V. A.
Ferrari, A.
Бондаренко, В. П.
Долгий, Л. Н.
Яковцева, В. А.
Keywords: публикации ученых
porous silicon
morphology
mechanism of growth
Issue Date: 2000
Publisher: Kluwer Academic Publishers, USA
Citation: Lamedica, G. Investigation of Morphology of Porous Silicon Formed on N+ Type Silicon / G. Lamedica and others // Journal of Porous Materials. – 2000. - Vol. 7 (1). - Рp. 23 – 26. - DOI: 10.1023/A:1009627412800.
Abstract: The properties of porous silicon (PS) are closely connected to its morphology, much investigation has been done in order to correlate the morphological characteristics of PS with the anodisation parameters. In this paper the results of morphological analysis of PS formed on N+type substrates of 〈1 0 0〉 and 〈1 1 1〉 orientation are presented. The dependences of the porosity, thickness of PS, density of pores and of the effective surface on the current density are obtained. Interpretation of these results in terms of diffusion layer and energy levels is given, with special attention given to the low current density case.
URI: https://libeldoc.bsuir.by/handle/123456789/11410
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