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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/33879
Title: Breakdown and conductivity switching in nanosized hafnium dioxide
Authors: Podryabinkin, D. A.
Danilyuk, A. L.
Данилюк, А. Л.
Подрябинкин, Д. А.
Keywords: публикации ученых
conductivity switching
memory cell
nanooxide
Issue Date: 2018
Publisher: Институт проблем машиноведения РАН, РФ
Citation: Podryabinkin, D. A. Breakdown and conductivity switching in nanosized hafnium dioxide / D. A. Podryabinkin, A. L. Danilyuk // Materials physics and mechanics (MPM). – 2018. – No 1, Vol. 39. – P. 68 – 74. – DOI: 10.18720/MPM.3912018_11.
Abstract: Atomic migration and electronic switching of bi-stable centers in conducting filaments formed in nanooxide based resistive random access memory (RRAM) cells are modeled and analyzed as competitive mechanisms determining their operation frequency. They are mediated by the filament growth dynamics. Atomic migration is responsible for a slow change of the filament resistivity with typical switching times in the millisecond range. Fast switching with the shortest nanosecond delay can be achieved using bi-stable electronic centers in the filaments. Possible configurations of such centers are discussed.
URI: https://libeldoc.bsuir.by/handle/123456789/33879
Appears in Collections:Публикации в зарубежных изданиях

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