https://libeldoc.bsuir.by/handle/123456789/33879
Название: | Breakdown and conductivity switching in nanosized hafnium dioxide |
Авторы: | Podryabinkin, D. A. Danilyuk, A. L. |
Ключевые слова: | публикации ученых;conductivity switching;memory cell;nanooxide |
Дата публикации: | 2018 |
Издательство: | Институт проблем машиноведения РАН |
Описание: | Podryabinkin, D. A. Breakdown and conductivity switching in nanosized hafnium dioxide / D. A. Podryabinkin, A. L. Danilyuk // Materials physics and mechanics (MPM). – 2018. – No 1, Vol. 39. – P. 68 – 74. – DOI: 10.18720/MPM.3912018_11. |
Аннотация: | Atomic migration and electronic switching of bi-stable centers in conducting filaments formed in nanooxide based resistive random access memory (RRAM) cells are modeled and analyzed as competitive mechanisms determining their operation frequency. They are mediated by the filament growth dynamics. Atomic migration is responsible for a slow change of the filament resistivity with typical switching times in the millisecond range. Fast switching with the shortest nanosecond delay can be achieved using bi-stable electronic centers in the filaments. Possible configurations of such centers are discussed. |
URI: | https://libeldoc.bsuir.by/handle/123456789/33879 |
Располагается в коллекциях: | Публикации в зарубежных изданиях |
Файл | Описание | Размер | Формат | |
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Podryabinkin_Breakdown.PDF | 1.16 MB | Adobe PDF | Открыть |
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