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Title: InGaZnO based TFT structures for active matrix addressing
Authors: Kazarkin, B. A.
Stepanov, A. A.
Smirnov, A. G.
Shiripov, V.
Khokhlov, E. A.
Ksendzov, A.
Казаркин, Б. А.
Степанов, А. А.
Смирнов, А. Г.
Keywords: материалы конференций;semiconductor compounds;active matrices;display technology
Issue Date: 2019
Publisher: БГУИР
Citation: InGaZnO based TFT structures for active matrix addressing / B. Kazarkin [et al.] // Eurodisplay 2019 : Book of abstracts of International Conference, Minsk, September 16-20, 2019 / Society for Information Display, Belarusian State University of Informatics and Radioelectronics ; ed.: V. A. Bogush [et al.]. – Minsk, 2019. – P. 88.
Abstract: We present the results on a TFT active-matrix structure based on the InGaZnO (IGZO) semiconductor compound formed by the magnetron plasma-chemical deposition method. Their structural, morphological and electro physical properties were studied. InGaZnO is an amorphous n-type transparent conductive oxide. The main advantage of IGZO over organic semiconductors is the stability of their properties and the significantly higher mobility of charge carriers. Thus, the balance of the required properties inherent in IGZO makes it a promising material for optoelectronics, photonics and display technology.
Appears in Collections:EuroDisplay 2019

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