https://libeldoc.bsuir.by/handle/123456789/46445
Название: | Memory-in-pixel circuit with low temperature poly-Si and oxide TFTs |
Авторы: | Jongbin Kim, B. Hoon-Ju Chung Seung-Woo Lee |
Ключевые слова: | материалы конференций;Memory-in-pixel;display;low temperature poly-silicon and oxide |
Дата публикации: | 2019 |
Издательство: | БГУИР |
Описание: | Jongbin Kim, B. Memory-in-pixel circuit with low temperature poly-Si and oxide TFTs / B. Jongbin Kim, Hoon-Ju Chung, Seung-Woo Lee // Eurodisplay 2019 : Book of abstracts of International Conference, Minsk, September 16-20, 2019 / Society for Information Display, Belarusian State University of Informatics and Radioelectronics ; ed.: V. A. Bogush [et al.]. – Minsk, 2019. – P. 84. |
Аннотация: | Memory-in-pixel (MIP) circuit has been studied for years to reduce power consumption of display products. Displays with MIP circuit can reduce power consumption because of their much lower frame rate than that of conventional displays using memory characteristics. Meanwhile, commercial display products have begun to introduce display circuits using low temperature poly-silicon and oxide (LTPO) TFTs to improve the performance and to use an advantage of extremely low leakage current of oxide TFTs. In this paper, we propose a new MIP circuit to achieve low power consumption as well as high reliability using LTPO TFTs. |
URI: | https://libeldoc.bsuir.by/handle/123456789/46445 |
Располагается в коллекциях: | EuroDisplay 2019 |
Файл | Описание | Размер | Формат | |
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Kim_Memory_in_pixel.pdf | 60.26 kB | Adobe PDF | Открыть |
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