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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/46591
Title: Metallization of Vias in Silicon Wafers to Produce Three-Dimensional Microstructures
Authors: Vorobjova, A. I.
Labunov, V. A.
Outkina, E. A.
Grapov, D. V.
Keywords: публикации ученых;electrochemical deposition;copper;barrier layer;three-dimensional assembly of crystals;metallization;morphological characteristics
Issue Date: 2021
Publisher: Pleiades Publishing, Ltd., США
Citation: Metallization of Vias in Silicon Wafers to Produce Three-Dimensional Microstructures / A. I. Vorobjova [et al.] // Russian Microelectronics. – 2021. – Vol. 50, № 1. – P. 8–17. – DOI : 10.1134/S1063739721010108.
Abstract: The processes of electrochemical deposition into a matrix of vertical vias of different diameters (500–2000 nm) in Si/SiO2 substrates with a TiN barrier layer at the bottom of the holes are studied. Morpho- logical studies of the metal in the holes show that the structure of copper clusters is rather uniform and is formed from crystallites of ~30 to 50 nm. Repeatability and stability with a homogeneous structure and with holes filled 100% by Cu determine the prospect of using the Si/SiO2/Cu system as a basic element for creating three-dimensional micro- and nanostructures, as well as for the 3D assembly of IC crystals.
URI: https://libeldoc.bsuir.by/handle/123456789/46591
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