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Browsing by Author Stempitsky, V. R.
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Showing results 9 to 28 of 34
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Issue Date
Title
Author(s)
2017
Electronic properties of graphene-based heterostructures
Skachkova, V. A.
;
Baranava, M. S.
;
Hvazdouski, D. C.
;
Stempitsky, V. R.
2017
Electrophysical properties of transition metals chalcogenides structures used as structural elements of the nanoelectronics devices
Baranava, M. S.
;
Najbuk, M.
;
Hvazdouski, D. C.
;
Stempitsky, V. R.
2017
Exchange interaction in zinc oxide doped by cobalt
Baranava, M. S.
;
Danilyuk, A. L.
;
Stempitsky, V. R.
2021
First-principles calculation of electronic properties of monoelement 2D materials
Hvazdouski, D. C.
;
Stempitsky, V. R.
2022
First-principles study of anisotropic thermal conductivity of GaN, AlN, and Al0.5Ga0.5N
Hvazdouski, D. C.
;
Baranava, M. S.
;
Stempitsky, V. R.
2020
GaN HEMT Thermal Characteristics Evaluation Using an Integrated Approach Based on the Combined Use of First-Principles and Device Simulations
Baranava, M. S.
;
Hvazdouski, D. C.
;
Volcheck, V. S.
;
Stempitsky, V. R.
;
Dinh, D.
;
Tran Tuan, T.
2019
Iron-induced acceptor centers in the gallium nitride high electron mobility transistor: thermal simulation and analysis
Dao Dinh Ha
;
Trung Tran Tuan
;
Volcheck, V. S.
;
Stempitsky, V. R.
2022
Large Signal Performance of The Gallium Nitride Heterostructure Field-Effect Transistor with a Graphene Heat-Removal System
Volcheck, V. S.
;
Stempitsky, V. R.
2019
Leakage current in AlGaN Schottky diode in terms of the phonon-assisted tunneling model
Volcheck, V. S.
;
Stempitsky, V. R.
2020
Magnetic interactions in Cr2Ge2Te6 and Cr2Si2Te6 monolayers: ab initio study
Baranava, M. S.
;
Hvazdouski, D. C.
;
Skachkova, V. A.
;
Stempitsky, V. R.
;
Danilyuk, A. L.
2022
Magnetic properties of low-dimensional MAX3 (M=Cr, A=Ge, Si and X=S, Se, Te) systems
Baranava, M. S.
;
Stempitsky, V. R.
2019
Mobility of a two-dimensional electron gas in the AlGaAs/GaAs heterostructure: simulation and analysis
Volcheck, V. S.
;
Stempitsky, V. R.
2019
Mobility of a two-dimensional electron gas in the AlGaN/GaN heterostructure: simulation and analysis
Volcheck, V. S.
;
Stempitsky, V. R.
2017
Parallel computing environment for digital devices simulation and VLSI topology verification
Belous, A. I.
;
Solodukha, V.
;
Shvedov, S.
;
Borovik, A. M.
;
Kostrov, A. I.
;
Stempitsky, V. R.
2024
Performance Characteristics of an Infrared Photo Detector Using Intersuband Junctions in Quantum Wells Based on Gallium Nitride
Volcheck, V. S.
;
Stempitsky, V. R.
2019
Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation
Lovshenko, I. Yu.
;
Khanko, V. T.
;
Stempitsky, V. R.
2013
Screening design and device/technology deep- submicron MOSFET simulation
Borovik, A. M.
;
Trung Tran Tuan
;
Stempitsky, V. R.
2013
Simulation of interaction between bacillus subtilis bacteria and silicon surface
Nelayev, V. V.
;
Burko, V.
;
Stempitsky, V. R.
;
Kolomiets, E.
;
Kuptsov, V.
;
Berezhnaya, A.
2018
Spin splitting in band structures of BiTeX (X=Cl, Br, I) monolayers
Hvazdouski, D. C.
;
Baranava, M. S.
;
Stempitsky, V. R.
2021
Studying the influence of microbolometer structure and geometry on the parameters of infrared detectors
Tran Van Trieu
;
Lovshenko, I. Yu.
;
Sadchenko, V.
;
Stempitsky, V. R.