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Showing results 7 to 26 of 34 < previous next >

Issue Date	Title	Author(s)
2018	Electronic and optic properties of transition metal dichalcogenides (MoS2, WSe2) and graphene heterostructures	Baranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R.; Volchek, S. A.; Najbuk, M.
2017	Electronic properties of graphene-based heterostructures	Skachkova, V. A.; Baranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R.
2017	Electronic properties of graphene-based heterostructures	Skachkova, V. A.; Baranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R.
2017	Electrophysical properties of transition metals chalcogenides structures used as structural elements of the nanoelectronics devices	Baranava, M. S.; Najbuk, M.; Hvazdouski, D. C.; Stempitsky, V. R.
2017	Exchange interaction in zinc oxide doped by cobalt	Baranava, M. S.; Danilyuk, A. L.; Stempitsky, V. R.
2021	First-principles calculation of electronic properties of monoelement 2D materials	Hvazdouski, D. C.; Stempitsky, V. R.
2022	First-principles study of anisotropic thermal conductivity of GaN, AlN, and Al0.5Ga0.5N	Hvazdouski, D. C.; Baranava, M. S.; Stempitsky, V. R.
2020	GaN HEMT Thermal Characteristics Evaluation Using an Integrated Approach Based on the Combined Use of First-Principles and Device Simulations	Baranava, M. S.; Hvazdouski, D. C.; Volcheck, V. S.; Stempitsky, V. R.; Dinh, D.; Tran Tuan, T.
2019	Iron-induced acceptor centers in the gallium nitride high electron mobility transistor: thermal simulation and analysis	Dao Dinh Ha; Trung Tran Tuan; Volcheck, V. S.; Stempitsky, V. R.
2022	Large Signal Performance of The Gallium Nitride Heterostructure Field-Effect Transistor with a Graphene Heat-Removal System	Volcheck, V. S.; Stempitsky, V. R.
2019	Leakage current in AlGaN Schottky diode in terms of the phonon-assisted tunneling model	Volcheck, V. S.; Stempitsky, V. R.
2020	Magnetic interactions in Cr2Ge2Te6 and Cr2Si2Te6 monolayers: ab initio study	Baranava, M. S.; Hvazdouski, D. C.; Skachkova, V. A.; Stempitsky, V. R.; Danilyuk, A. L.
2022	Magnetic properties of low-dimensional MAX3 (M=Cr, A=Ge, Si and X=S, Se, Te) systems	Baranava, M. S.; Stempitsky, V. R.
2019	Mobility of a two-dimensional electron gas in the AlGaAs/GaAs heterostructure: simulation and analysis	Volcheck, V. S.; Stempitsky, V. R.
2019	Mobility of a two-dimensional electron gas in the AlGaN/GaN heterostructure: simulation and analysis	Volcheck, V. S.; Stempitsky, V. R.
2017	Parallel computing environment for digital devices simulation and VLSI topology verification	Belous, A. I.; Solodukha, V.; Shvedov, S.; Borovik, A. M.; Kostrov, A. I.; Stempitsky, V. R.
2024	Performance Characteristics of an Infrared Photo Detector Using Intersuband Junctions in Quantum Wells Based on Gallium Nitride	Volcheck, V. S.; Stempitsky, V. R.
2019	Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation	Lovshenko, I. Yu.; Khanko, V. T.; Stempitsky, V. R.
2013	Screening design and device/technology deep- submicron MOSFET simulation	Borovik, A. M.; Trung Tran Tuan; Stempitsky, V. R.
2013	Simulation of interaction between bacillus subtilis bacteria and silicon surface	Nelayev, V. V.; Burko, V.; Stempitsky, V. R.; Kolomiets, E.; Kuptsov, V.; Berezhnaya, A.

Showing results 7 to 26 of 34 < previous next >

Browsing by Author Stempitsky, V. R.