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Browsing by Author Stempitsky, V. R.

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Showing results 6 to 25 of 49 < previous   next >
Issue DateTitleAuthor(s)
2018Electronic and optic properties of transition metal dichalcogenides (MoS2, WSe2) and graphene heterostructuresBaranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R.; Volchek, S. A.; Najbuk, M.
2017Electronic properties of graphene-based heterostructuresSkachkova, V. A.; Baranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R.
2017Electronic properties of graphene-based heterostructuresSkachkova, V. A.; Baranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R.
2017Electrophysical properties of transition metals chalcogenides structures used as structural elements of the nanoelectronics devicesBaranava, M. S.; Najbuk, M.; Hvazdouski, D. C.; Stempitsky, V. R.
2017Exchange interaction in zinc oxide doped by cobaltBaranava, M. S.; Danilyuk, A. L.; Stempitsky, V. R.
2021First-principles calculation of electronic properties of monoelement 2D materialsHvazdouski, D. C.; Stempitsky, V. R.
2020GaN HEMT Thermal Characteristics Evaluation Using an Integrated Approach Based on the Combined Use of First-Principles and Device SimulationsBaranava, M. S.; Hvazdouski, D. C.; Volcheck, V. S.; Stempitsky, V. R.; Dinh, D.; Tran Tuan, T.
2019Iron-induced acceptor centers in the gallium nitride high electron mobility transistor: thermal simulation and analysisDao Dinh Ha; Trung Tran Tuan; Volcheck, V. S.; Stempitsky, V. R.
2022Large Signal Performance of The Gallium Nitride Heterostructure Field-Effect Transistor with a Graphene Heat-Removal SystemVolcheck, V. S.; Stempitsky, V. R.
2019Leakage current in AlGaN Schottky diode in terms of the phonon-assisted tunneling modelVolcheck, V. S.; Stempitsky, V. R.
2020Magnetic interactions in Cr2Ge2Te6 and Cr2Si2Te6 monolayers: ab initio studyBaranava, M. S.; Hvazdouski, D. C.; Skachkova, V. A.; Stempitsky, V. R.; Danilyuk, A. L.
2019Mobility of a two-dimensional electron gas in the AlGaAs/GaAs heterostructure: simulation and analysisVolcheck, V. S.; Stempitsky, V. R.
2019Mobility of a two-dimensional electron gas in the AlGaN/GaN heterostructure: simulation and analysisVolcheck, V. S.; Stempitsky, V. R.
2017Parallel computing environment for digital devices simulation and VLSI topology verificationBelous, A. I.; Solodukha, V.; Shvedov, S.; Borovik, A. M.; Kostrov, A. I.; Stempitsky, V. R.
2019Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiationLovshenko, I. Yu.; Khanko, V. T.; Stempitsky, V. R.
2013Screening design and device/technology deep- submicron MOSFET simulationBorovik, A. M.; Trung Tran Tuan; Stempitsky, V. R.
2013Simulation of interaction between bacillus subtilis bacteria and silicon surfaceNelayev, V. V.; Burko, V.; Stempitsky, V. R.; Kolomiets, E.; Kuptsov, V.; Berezhnaya, A.
2018Spin splitting in band structures of BiTeX (X=Cl, Br, I) monolayersHvazdouski, D. C.; Baranava, M. S.; Stempitsky, V. R.
2021Studying the influence of microbolometer structure and geometry on the parameters of infrared detectorsTran Van Trieu; Lovshenko, I. Yu.; Sadchenko, V.; Stempitsky, V. R.
2021Temperature dependence of the thermal conductivity of wurtzite aluminum nitride, gallium nitride and aluminum-gallium nitrideVolcheck, V. S.; Hvazdouski, D. C.; Baranava, M. S.; Stempitsky, V. R.