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Browsing by Author Krivosheeva, A. V.

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Issue DateTitleAuthor(s)
2009Ab initio investigation of CO adsorption on self-assembled Pt nanowires on Ge(001)Krivosheeva, A. V.; Borisenko, V. E.
2015Band gap modifications of two-dimensional defected MoS2Borisenko, V. E.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Lazzari, J. L.; Skorodumova, N. V.; Tay, B. K.
2017Calculation of phonon spectra of two-dimensional crystals of molybdenum disulfide and ditellurideAlexeev, A. Yu.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.
2019Charge properties of a MOS transistor structure with a channel made of a two-dimensional crystalMakovskaya, T. I.; Danilyuk, A. L.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.
2020Charge Properties of the MOS Transistor Structure with the Channel Made from a Two-Dimensional CrystalMakovskaya, T. I.; Danilyuk, A. L.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.
2017Effect of pressure on electronic and optical properties of magnesium silicide and germanideShaposhnikov, V. L.; Krivosheeva, A. V.; Borisenko, V. E.
2014Electronic and dynamical properties of bulk and layered MoS2Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Lazzari, J. L.
2017Electronic Properties of Bulk and Monolayer TMDs: Theoretical Study Within DFT Framework (GVJ-2e Method)Gusakova, J.; Wang, X.; Shiau, L. L.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Gusakov, V. E.; Tay, B. K.
2017Electronic properties of bulk and monolayer TMDs: theoretical study within DFT framework GVJ-2e methodGusakova, J.; Wang, X.; Shiau, L. L.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Gusakov, V. E.; Tay, B. K.
2017Electronic properties of thin BaSi2 films with different orientationsMigas, D. B.; Bogorodz, V. O.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Filonov, A. B.; Borisenko, V. E.
2019Electronic properties of WS2/WSe2 heterostructure containing Te impurity: the role of substituting positionKrivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Lazzari, J. L.
2020Energy Band Gap tuning in Te doped WS2/WSe2 HeterostructuresKrivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. V.; Lazzari, J.-L.
2021Heterostructures of two-dimensional transition metal dichalcogenides: Formation, ab initio modeling and possible applicationsKrivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Lazzari, J.L.
2019Impact of Defects on Electronic Properties of Heterostructures Constructed From Monolayers of Transition Metal DichalcogenidesShaposhnikov, V. L.; Krivosheeva, A. V.; Borisenko, V. E.; Lazzari, J. L.
2017Lattice thermal conductivity of transition metal dichalcogenidesAlexeev, A. Yu.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.
2018Lattice thermal conductivity of transition metal dichalcogenidesAlexeev, A. Yu.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.
2017Magnetic ordering in doped two-dimensional dichalcogenidesKrivosheeva, A. V.; Shaposhnikov, V. L.; Lazzari, J.L.
2014Magnetic properties of AII BIV CV2 chalcopyrite semiconductors doped with 3d-elementsBorisenko, V. E.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Lazzari, J. L.
2017Simulation of phonon spectra in three component two dimensional crystals of dichalcogenidesAlexeev, A. Yu.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.
2021The Effect of Compressive and Tensile Strains on the Electron Structure of PhosphoreneKrivosheeva, A. V.; Shaposhnikov, V. L.; Štich, I.