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Browsing by Author Shaposhnikov, V. L.

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Issue DateTitleAuthor(s)
2015Band gap modifications of two-dimensional defected MoS2Borisenko, V. E.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Lazzari, J. L.; Skorodumova, N. V.; Tay, B. K.
2017Calculation of phonon spectra of two-dimensional crystals of molybdenum disulfide and ditellurideAlexeev, A. Yu.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.
2024Charge critical phenomena in a field heterostructure with two-dimensional crystalDanilyuk, A. L.; Podryabinkin, D. A.; Shaposhnikov, V. L.; Prischepa, S. L.
2019Charge properties of a MOS transistor structure with a channel made of a two-dimensional crystalMakovskaya, T. I.; Danilyuk, A. L.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.
2020Charge Properties of the MOS Transistor Structure with the Channel Made from a Two-Dimensional CrystalMakovskaya, T. I.; Danilyuk, A. L.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.
2017Effect of pressure on electronic and optical properties of magnesium silicide and germanideShaposhnikov, V. L.; Krivosheeva, A. V.; Borisenko, V. E.
2014Electronic and dynamical properties of bulk and layered MoS2Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Lazzari, J. L.
2023Electronic and magnetic properties of doped 2D MoS2 /Ph systemsKrivosheeva, A. V.; Shaposhnikov, V. L.
2017Electronic Properties of Bulk and Monolayer TMDs: Theoretical Study Within DFT Framework (GVJ-2e Method)Gusakova, J.; Wang, X.; Shiau, L. L.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Gusakov, V. E.; Tay, B. K.
2017Electronic properties of bulk and monolayer TMDs: theoretical study within DFT framework GVJ-2e methodGusakova, J.; Wang, X.; Shiau, L. L.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Gusakov, V. E.; Tay, B. K.
2015Electronic properties of semiconducting Ca2Si silicide: From bulk to nanostructures by means of first principles calculationsBorisenko, V. E.; Migas, D. B.; Bogorodz, V. O.; Filonov, A. B.; Shaposhnikov, V. L.; Galkin, N. G.
2017Electronic properties of thin BaSi2 films with different orientationsMigas, D. B.; Bogorodz, V. O.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Filonov, A. B.; Borisenko, V. E.
2019Electronic properties of WS2/WSe2 heterostructure containing Te impurity: the role of substituting positionKrivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Lazzari, J. L.
2020Energy Band Gap tuning in Te doped WS2/WSe2 HeterostructuresKrivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. V.; Lazzari, J.-L.
2021Heterostructures of two-dimensional transition metal dichalcogenides: Formation, ab initio modeling and possible applicationsKrivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Lazzari, J.L.
2019Impact of Defects on Electronic Properties of Heterostructures Constructed From Monolayers of Transition Metal DichalcogenidesShaposhnikov, V. L.; Krivosheeva, A. V.; Borisenko, V. E.; Lazzari, J. L.
2017Lattice thermal conductivity of transition metal dichalcogenidesAlexeev, A. Yu.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.
2018Lattice thermal conductivity of transition metal dichalcogenidesAlexeev, A. Yu.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.
2017Magnetic ordering in doped two-dimensional dichalcogenidesKrivosheeva, A. V.; Shaposhnikov, V. L.; Lazzari, J.L.
2023Magnetic ordering in X-Y-N 2 semiconductors (X=Mg, Zn; Y=Si, Ge) doped with Cr, Mn, and Fe atomsKrivosheeva, A. V.; Shaposhnikov, V. L.
Showing results 1 to 20 of 28  next >