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Browsing by Author Stempitsky, V. R.

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Showing results 14 to 30 of 30 < previous 
Issue DateTitleAuthor(s)
2022Large Signal Performance of The Gallium Nitride Heterostructure Field-Effect Transistor with a Graphene Heat-Removal SystemVolcheck, V. S.; Stempitsky, V. R.
2019Leakage current in AlGaN Schottky diode in terms of the phonon-assisted tunneling modelVolcheck, V. S.; Stempitsky, V. R.
2020Magnetic interactions in Cr2Ge2Te6 and Cr2Si2Te6 monolayers: ab initio studyBaranava, M. S.; Hvazdouski, D. C.; Skachkova, V. A.; Stempitsky, V. R.; Danilyuk, A. L.
2019Mobility of a two-dimensional electron gas in the AlGaAs/GaAs heterostructure: simulation and analysisVolcheck, V. S.; Stempitsky, V. R.
2019Mobility of a two-dimensional electron gas in the AlGaN/GaN heterostructure: simulation and analysisVolcheck, V. S.; Stempitsky, V. R.
2017Parallel computing environment for digital devices simulation and VLSI topology verificationBelous, A. I.; Solodukha, V.; Shvedov, S.; Borovik, A. M.; Kostrov, A. I.; Stempitsky, V. R.
2019Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiationLovshenko, I. Yu.; Khanko, V. T.; Stempitsky, V. R.
2013Screening design and device/technology deep- submicron MOSFET simulationBorovik, A. M.; Trung Tran Tuan; Stempitsky, V. R.
2013Simulation of interaction between bacillus subtilis bacteria and silicon surfaceNelayev, V. V.; Burko, V.; Stempitsky, V. R.; Kolomiets, E.; Kuptsov, V.; Berezhnaya, A.
2018Spin splitting in band structures of BiTeX (X=Cl, Br, I) monolayersHvazdouski, D. C.; Baranava, M. S.; Stempitsky, V. R.
2021Studying the influence of microbolometer structure and geometry on the parameters of infrared detectorsTran Van Trieu; Lovshenko, I. Yu.; Sadchenko, V.; Stempitsky, V. R.
2021Temperature dependence of the thermal conductivity of wurtzite aluminum nitride, gallium nitride and aluminum-gallium nitrideVolcheck, V. S.; Hvazdouski, D. C.; Baranava, M. S.; Stempitsky, V. R.
2021The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAsLovshenko, I.; Voronov, A.; Roshchenko, P. S.; Ternov, R.; Stempitsky, V. R.
2021The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAsLovshenko, I. Yu.; Voronov, A. Yu.; Roshchenko, P. S.; Ternov, R. E.; Galkin, Y. D.; Kunts, A. V.; Stempitsky, V. R.; Jinshun Bi
2021Учет воздействия протонов при анализе электрических характеристик арсенид-галлиевого полевого транзистораЛовшенко, И. Ю.; Стемпицкий, В. Р.; Lovshenko, I. Y.; Stempitsky, V. R.
2015Электрические и электронные компоненты устройств и систем. Лабораторный практикум : пособиеБаранов, В. В.; Логин, В. М.; Серенков, В. Ю.; Стемпицкий, В. Р.; Stempitsky, V. R.
2020Электронные свойства наноструктурированного оксида ниобия с термически активированными точечными дефектамиГвоздовский, Д. Ч.; Стемпицкий, В. Р.; Stempitsky, V. R.