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Browsing by Author Stempitsky, V. R.
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Showing results 22 to 34 of 34
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Issue Date
Title
Author(s)
2017
Parallel computing environment for digital devices simulation and VLSI topology verification
Belous, A. I.
;
Solodukha, V.
;
Shvedov, S.
;
Borovik, A. M.
;
Kostrov, A. I.
;
Stempitsky, V. R.
2024
Performance Characteristics of an Infrared Photo Detector Using Intersuband Junctions in Quantum Wells Based on Gallium Nitride
Volcheck, V. S.
;
Stempitsky, V. R.
2019
Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation
Lovshenko, I. Yu.
;
Khanko, V. T.
;
Stempitsky, V. R.
2013
Screening design and device/technology deep- submicron MOSFET simulation
Borovik, A. M.
;
Trung Tran Tuan
;
Stempitsky, V. R.
2013
Simulation of interaction between bacillus subtilis bacteria and silicon surface
Nelayev, V. V.
;
Burko, V.
;
Stempitsky, V. R.
;
Kolomiets, E.
;
Kuptsov, V.
;
Berezhnaya, A.
2018
Spin splitting in band structures of BiTeX (X=Cl, Br, I) monolayers
Hvazdouski, D. C.
;
Baranava, M. S.
;
Stempitsky, V. R.
2021
Studying the influence of microbolometer structure and geometry on the parameters of infrared detectors
Tran Van Trieu
;
Lovshenko, I. Yu.
;
Sadchenko, V.
;
Stempitsky, V. R.
2021
Temperature dependence of the thermal conductivity of wurtzite aluminum nitride, gallium nitride and aluminum-gallium nitride
Volcheck, V. S.
;
Hvazdouski, D. C.
;
Baranava, M. S.
;
Stempitsky, V. R.
2021
The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs
Lovshenko, I.
;
Voronov, A.
;
Roshchenko, P. S.
;
Ternov, R.
;
Stempitsky, V. R.
2021
The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs
Lovshenko, I. Yu.
;
Voronov, A. Yu.
;
Roshchenko, P. S.
;
Ternov, R. E.
;
Galkin, Y. D.
;
Kunts, A. V.
;
Stempitsky, V. R.
;
Jinshun Bi
2022
Thermal conductivity of wurtzite gallium nitride
Volcheck, V. S.
;
Baranava, M. S.
;
Stempitsky, V. R.
2021
Учет воздействия протонов при анализе электрических характеристик арсенид-галлиевого полевого транзистора
Ловшенко, И. Ю.
;
Стемпицкий, В. Р.
;
Lovshenko, I. Y.
;
Stempitsky, V. R.
2020
Электронные свойства наноструктурированного оксида ниобия с термически активированными точечными дефектами
Гвоздовский, Д. Ч.
;
Стемпицкий, В. Р.
;
Stempitsky, V. R.